The secondary control gate. Typically linked to an Automatic Gain Control (AGC) line or used as the local oscillator (LO) input terminal in mixing stages.
Ciss(max)cap C sub i s s open paren m a x close paren end-sub Maximum capacitance seen looking into the gate Anatomy of a Dual-Gate MOSFET
VG2S(off)cap V sub cap G 2 cap S open paren o f f close paren end-sub
When handling the 3SK41, it is essential to take precautions to prevent damage from electrostatic discharge (ESD). The transistor should be handled by the leads only, and not by the body. Additionally, the operating conditions should be within the specified limits to ensure reliable operation. 3sk41 datasheet
(Note: A gate driver IC is essential to ensure the $V_GS$ threshold is met quickly to minimize switching losses in the linear region.)
The is a legacy, high-performance N-channel dual-gate Silicon MOSFET historically manufactured by prominent semiconductor pioneers like NEC , Hitachi , and Motorola . Enclosed in highly stable, hermetically sealed metal packages such as the TO-72 (CAN-4) , this device is highly regarded by RF engineers, vintage radio restorers, and hobbyists for its exceptional performance in high-frequency amplification and signal mixing.
When selecting a replacement, pay close attention to the and the bias requirements (depletion‑mode versus enhancement‑mode), as not all MOSFETs are directly interchangeable. The secondary control gate
Minimizes loading on preceding stages. 2. Technical Specifications (Absolute Maximum Ratings)
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Supplying clean low-noise amplification for radio receivers. The transistor should be handled by the leads
Front-end stages for TV and radio receivers to amplify weak signals with low noise. VHF/UHF Tuners:
: Many 3SK41s fail due to "purple plague" corrosion in the TO-72 can after 30+ years. If your device passes DC tests but has no RF gain, replace it.